A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH₃)₂Cl]₂

• Elif Bilgilisoy,
• Ali Kamali,
• Thomas Xaver Gentner,
• Gerd Ballmann,
• Sjoerd Harder,
• Hans-Peter Steinrück,
• Hubertus Marbach and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

• and through reductive halogen removal using atomic hydrogen [58]. In an early study by Spencer et al. [57], 0.7 nm layers of Pt(CO)2Cl2 were exposed to 500 eV electrons and desorbing ligands were monitored by mass spectrometry, while the development of the deposit was monitored using XPS. It was found

• post-deposition purification study where two approaches were taken: prolonged electron exposure and reductive halogen removal using atomic hydrogen [58]. While atomic hydrogen was found to effectively remove the halogen, prolonged electron exposure was only found to have significant influence at the

Stability and activity of platinum nanoparticles in the oxygen electroreduction reaction: is size or uniformity of primary importance?

• Kirill O. Paperzh,
• Anastasia A. Alekseenko,
• Vadim A. Volochaev,
• Ilya V. Pankov,
• Olga A. Safronenko and
• Vladimir E. Guterman

Beilstein J. Nanotechnol. 2021, 12, 593–606, doi:10.3762/bjnano.12.49

• for desorption (Qd) and adsorption (Qad) of atomic hydrogen, as described in more detail in Supporting Information File 1. The CV recording rate was 20 mV·s−1 and the potential range was 0.04–1.2 V relative to RHE. To determine the ORR activity of the catalysts, the electrolyte was saturated with

• decrease in all sections of the CVs (Figure 4). The calculation based on the amount of energy consumed for the electrochemical adsorption and desorption of an atomic hydrogen monolayer showed that an increase in the Pt loading in the obtained samples (from 20.4 to 39 wt %) leads to a decrease in the ESA

One-step synthesis of carbon-supported electrocatalysts

• Sebastian Tigges,
• Nicolas Wöhrl,
• Ivan Radev,
• Ulrich Hagemann,
• Markus Heidelmann,
• Thai Binh Nguyen,
• Stanislav Gorelkov,
• Stephan Schulz and
• Axel Lorke

Beilstein J. Nanotechnol. 2020, 11, 1419–1431, doi:10.3762/bjnano.11.126

• . [28] and Suzuki and coworkers [29]. The reduction of the density of the CNWs results from the etching of the CNWs at the initial nucleation step by atomic hydrogen, effectively reducing the nucleation sites. Increasing the H2 concentration in the plasma finally results in the deposition of an

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

• Jeremiah Croshaw,
• Thomas Dienel,
• Taleana Huff and
• Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

• charged species by means of tip-induced liberation of an atomic hydrogen from the defect site. While our work presents a comprehensive understanding of the experimental nature of these defects, additional theoretical studies using more powerful techniques such as DFT is still needed to confirm the results

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• deactivate P-donors and B-acceptors in heavily doped Si nanowires [47] and in the bulk [48][49][50]. However, this type of dopant passivation solely relies on very reactive atomic hydrogen (rather than molecular H2 gas) and requires much lower temperatures of 100–150 °C to be efficient. When considering H2

Chemistry for electron-induced nanofabrication

• Petra Swiderek,
• Hubertus Marbach and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2018, 9, 1317–1320, doi:10.3762/bjnano.9.124

• (CO)2Cl2, the performance of treatment with atomic hydrogen is thus studied using surface science techniques [28]. Another subject covered is the fundamental chemistry of water-assisted purification processes [29], an approach that has successfully been applied to remove carbon from platinum and gold

Dynamics and fragmentation mechanism of (C₅H₄CH₃)Pt(CH₃)₃ on SiO₂ surfaces

• Kaliappan Muthukumar,
• Harald O. Jeschke and
• Roser Valentí

Beilstein J. Nanotechnol. 2018, 9, 711–720, doi:10.3762/bjnano.9.66

• (such as annealing, post-deposition annealing in O2, exposure to atomic hydrogen, post-deposition electron irradiation) were proposed as viable techniques [7][8], but these approaches are not completely free from reproducibility issues. Therefore, to improve the metal content and to address the nature

Electron-driven and thermal chemistry during water-assisted purification of platinum nanomaterials generated by electron beam induced deposition

• Ziyan Warneke,
• Markus Rohdenburg,
• Jonas Warneke,
• Janina Kopyra and
• Petra Swiderek

Beilstein J. Nanotechnol. 2018, 9, 77–90, doi:10.3762/bjnano.9.10

• . In fact, electron-induced CH bond cleavage releases atomic hydrogen that, in a condensed phase, can add to CC double bonds. This can induce a sequence of reactions that leads to formation of the saturated analogue of an initially unsaturated hydrocarbon molecule [36]. In the case of MeCpH, such a

Comparing postdeposition reactions of electrons and radicals with Pt nanostructures created by focused electron beam induced deposition

• Julie A. Spencer,
• Michael Barclay,
• Miranda J. Gallagher,
• Robert Winkler,
• Ilyas Unlu,
• Yung-Chien Wu,
• Harald Plank,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2017, 8, 2410–2424, doi:10.3762/bjnano.8.240

• Department of Chemistry, University of Florida, Gainesville, FL, 32611-7200, USA, Institute of Electron Microscopy and Nanoanalysis, Graz University of Technology, Steyrergasse 17, 8010 Graz, Austria 10.3762/bjnano.8.240 Abstract The ability of electrons and atomic hydrogen (AH) to remove residual chlorine

• of AO restricts its effectiveness as a purification strategy to relatively small nanostructures. Keywords: atomic hydrogen; atomic oxygen; electron beam processing; focused electron beam induced deposition (FEBID); purification; Introduction Focused electron beam induced deposition (FEBID) has

• degree of nanostructure resolution. Low-temperature purification can also be achieved by reactive species generated by an independent source. Botman et al. [26] treated FEBID deposits created from MeCpPtMe3 with atomic hydrogen (AH), which resulted in a decrease in carbon content (from 81 to 65 atom

The role of low-energy electrons in focused electron beam induced deposition: four case studies of representative precursors

• Rachel M. Thorman,
• Ragesh Kumar T. P.,
• D. Howard Fairbrother and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2015, 6, 1904–1926, doi:10.3762/bjnano.6.194

• and electron beam-assisted in situ and post-deposition treatment with processing gases, however, considerably higher Pt content has been achieved [55][56], and resistivity only about six times that of bulk Pt may be attained [57][58]. Such approaches include exposure to atomic hydrogen [54], water [59

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

• Aleksandra Szkudlarek,
• Alfredo Rodrigues Vaz,
• Yucheng Zhang,
• Andrzej Rudkowski,
• Czesław Kapusta,
• Rolf Erni,
• Stanislav Moshkalev and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156

• [38]. The metal content could be then increased by two sequential purification steps: 1) deposit bombardment with atomic oxygen 2) deposit bombardment with atomic hydrogen. In the first step the carbonaceous material was fully removed from the material and in the next step the metal oxide was reduced

• to the metal. Although this method was successfully applied to obtain a deposit with high metal purity, the total exposure time was rather long: 40 h for oxygen and 2 h for hydrogen. The efficiency of atomic hydrogen only for purification of Cu–C material obtained by an ion-induced deposition process

Transformations of PTCDA structures on rutile TiO₂ induced by thermal annealing and intermolecular forces

• Szymon Godlewski,
• Jakub S. Prauzner-Bechcicki,
• Thilo Glatzel,
• Ernst Meyer and
• Marek Szymoński

Beilstein J. Nanotechnol. 2015, 6, 1498–1507, doi:10.3762/bjnano.6.155

• the preparation procedure, leading to a slight reduction of the sample and decreasing the intrinsic band gap from approximately 3.0 eV to 1.5–2.5 eV. Hydroxy groups are created as a result of atomic hydrogen adsorption and dissociative adsorption of water at oxygen vacancies. The surface is very

Fringe structures and tunable bandgap width of 2D boron nitride nanosheets

• Peter Feng,
• Muhammad Sajjad,
• Eric Yiming Li,
• Hongxin Zhang,
• Jin Chu,
• Ali Aldalbahi and
• Gerardo Morell

Beilstein J. Nanotechnol. 2014, 5, 1186–1192, doi:10.3762/bjnano.5.130

• . Theoretically, the BNNS band gap would decrease following an increase of atomic hydrogen coverage on the surfaces of BNNSs. Therefore, functionalization of the BNNSs is conducted in a special chamber as shown in Figure 6 based on hydrogen atom plasma beam treatments, and then the samples are characterized using

Electronic and transport properties of kinked graphene

• Jesper Toft Rasmussen,
• Tue Gunst,
• Peter Bøggild,
• Antti-Pekka Jauho and
• Mads Brandbyge

Beilstein J. Nanotechnol. 2013, 4, 103–110, doi:10.3762/bjnano.4.12

• bending, of a graphene sheet is known to increase the chemical reactivity presenting an opportunity for templated chemical functionalisation. Using first-principles calculations based on density functional theory (DFT), we investigate the reaction barrier reduction for the adsorption of atomic hydrogen at

• graphene sheet, and may open a route to band gap engineered devices [13][18][19][20][21]. Very recently, Wu et al. [21] showed how graphene on a Si substrate decorated with SiO2 nanoparticles induced local regions of strain and increased reactivity in a selective manner. Atomic hydrogen or other chemical

• barrier that needs to be overcome before the single hydrogen atom sticks to the graphene sheet. Several investigations based on DFT calculations show that atomic hydrogen adsorbs on-top on flat graphene with a barrier about 0.2 eV and binding energy in the range of 0.7–1.0 eV [22][32][33][34]. Thus a

Pure hydrogen low-temperature plasma exposure of HOPG and graphene: Graphane formation?

• Baran Eren,
• Dorothée Hug,
• Laurent Marot,
• Rémy Pawlak,
• Marcin Kisiel,
• Roland Steiner,
• Dominik M. Zumbühl and
• Ernst Meyer

Beilstein J. Nanotechnol. 2012, 3, 852–859, doi:10.3762/bjnano.3.96

• properties [1][2]. A new perspective is the chemical modification of graphene, especially the incisive idea of attaching atomic hydrogen to both sides of the graphene lattice to produce graphane (Figure 1b): an sp3-hybridized insulating derivative of graphene [3][4][5][6]. Graphane offers a brand new

• volumetric capacity of 0.12 kg H2/L, which is higher than the Department of Energy target of 0.081 kg H2/L for the year 2015 [3]. A prerequisite for graphane synthesis is the abundance of atomic hydrogen to react with unsaturated C–C bonds of graphene; subsequently leading to C–H bond formation on both sides

• theoretical [15], and experimental works focused on the chemisorption of atomic hydrogen [16][17][18][19][20]. A new research focus is the investigation of hydrogen-containing plasmas with graphitic surfaces [5][21]. Particularly the work of Elias et al. is interesting, in which graphane growth was claimed

Low-temperature synthesis of carbon nanotubes on indium tin oxide electrodes for organic solar cells

• Andrea Capasso,
• Luigi Salamandra,
• Aldo Di Carlo,
• John M. Bell and
• Nunzio Motta

Beilstein J. Nanotechnol. 2012, 3, 524–532, doi:10.3762/bjnano.3.60

• ITO film to a hydrogen atmosphere at 550 °C (and the probable creation of atomic hydrogen coming from the dissociation of either H2 or C2H2, perhaps enabled by the metal catalyst layer) enables the formation of small clusters of metallic indium, which coalesce during the CVD to form spherical